The adsorbate electron affinity dependence of femtosecond electron dynamics at dielectric/metal interfaces

Citation
Kj. Gaffney et al., The adsorbate electron affinity dependence of femtosecond electron dynamics at dielectric/metal interfaces, J CHIN CHEM, 47(4A), 2000, pp. 759-763
Citations number
30
Categorie Soggetti
Chemistry
Journal title
JOURNAL OF THE CHINESE CHEMICAL SOCIETY
ISSN journal
00094536 → ACNP
Volume
47
Issue
4A
Year of publication
2000
Pages
759 - 763
Database
ISI
SICI code
0009-4536(200008)47:4A<759:TAEADO>2.0.ZU;2-W
Abstract
The two photon photoemission technique has been utilized to investigate the adsorbate electron affinity dependence of interfacial electron transfer dy namics. The comparison of calculated and experimental results highlight a b rief discussion of a dielectric continuum model. For the n-heptane/Ag(111) and the benzene/ Ag(111) interfaces, the model effectively reproduces exper imental image potential state properties. The model fails to adequately des cribe the influence of anthracene adsorbates on image potential state lifet imes, as demonstrated by the experimental and theoretical results. The expe rimental n = 1 lifetime of 1200 femtoseconds and binding energy of -0.53 eV for the anthracene bilayer differ greatly from the calculated values of 40 femtoseconds and -1.4 eV.