LOW-DENSITY OF STATES AT THE EPITAXIAL CAF2-SI(111) INTERFACE

Authors
DAHNEPRIETSCH M MANKE I KALKA T WEN HJ KAINDL G
Citation
M. Dahneprietsch et al., LOW-DENSITY OF STATES AT THE EPITAXIAL CAF2-SI(111) INTERFACE, Journal of physics. D, Applied physics, 30(12), 1997, pp. 48-50
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics → ACNP
ISSN journal
00223727
Volume
30
Issue
12
Year of publication
1997
Pages
48 - 50
Database
ISI
SICI code
0022-3727(1997)30:12<48:LOSATE>2.0.ZU;2-6
Abstract
The density of interface states at the epitaxial CaF2-Si(111) interfac e grown under UHV conditions at 700 degrees C is found to be much lowe r than assumed previously, as revealed from photoelectron spectroscopy . An upper limit is estimated to be 3 x 10(12) cm(-2) eV(-1) near midg ap, which comes close to values obtained for SiO2-Si interfaces.