THICKNESS PROFILES OF THIN-FILMS CAUSED BY SECONDARY REACTIONS IN FLOW-TYPE ATOMIC LAYER DEPOSITION REACTORS

The secondary reaction of HCl with the growing metal oxide surface dur ing atomic layer deposition from a metal chloride and water is investi gated using model calculations. HCl released during chemisorption of a metal chloride occupies adsorption sites for the metal chloride which results in a decrease in the film thickness in the gas-flow direction . The calculation model based on the continuity equation and kinetic e quations for the surface coverage is described. The dependences of the thickness profile on the reactivity of HCl and on the adsorption of t he metal chloride are analysed.