NUCLEATION TRANSITIONS FOR INGAAS ISLANDS ON VICINAL (100)-GAAS

Differences in InGaAs island nucleation on vicinal (100) GaAs surfaces as a function of miscut angle are presented. Arrhenius plots of satur ation island densities show changes in activation energy and critical cluster size, which are interpreted as resulting from nucleation throu gh different mechanisims: homogeneously (on terraces) and heterogeneou sly on monatomic and multiatomic steps. Furthermore, a link between st ep separation and island; uniformity is observed. Step availability is found to be a major determinant of island uniformity at temperatures where clusters are not mobile.