Electroluminescent device based on AlxGa1-xAs-GaAs quantum well nanostructures

AlGaAs-GaAs based quantum well nanopillar arrays are fabricated by using th e UV lithography and the chlorine based reactive ion etching. The nanostruc ture is fabricated so as to get the confinement of carriers within the i-Ga As quantum well layer of 9 nm thick sandwiched between two barrier layers o f Al0.33Ga0.67As of 11 nm thick in order to induce the possible light emiss ion from the quantum well region. The size of pillars is obtained from SEM analysis. The number of pillars available within the 1 mu m(2) mesa size is found to be around 400 having the pillar size between 10 and 50 nm. Electr oluminesence (EL) is detected from the nanopillars when applying a forward bias voltage of greater than or equal to 1.3 V and the emitted light is obs erved at around 830 nm.