Reorientation transition in Cu(100)/Ni/Co

Citation
C. Uiberacker et al., Reorientation transition in Cu(100)/Ni/Co, PHYS REV B, 62(9), 2000, pp. 5305-5308
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
9
Year of publication
2000
Pages
5305 - 5308
Database
ISI
SICI code
0163-1829(20000901)62:9<5305:RTIC>2.0.ZU;2-0
Abstract
The magnetic anisotropy energy of Cu(100)/Ni/Co-m, 0 less than or equal to m less than or equal to 5, is calculated using the spin-polarized fully rel ativistic screened Korringa-Kohn-Rostoker method for layered systems. The N i film was divided into two regions, one consisting of Ni layers epitaxiall y grown on Cu(100) and tetragonally relaxed with a c/a ratio of 0.945 and, subsequently a transient region subject of strain relaxation, the other one consisting of Ni layers corresponding to a fee Ni parent lattice. For both regions, separate calculations were performed and then combined with each other on the basis of an analysis of layer decomposed contributions to the anisotropy energy. By varying the thickness of both regions the critical (t otal) thickness for the reorientation transition of the magnetization from perpendicular to in-plane is determined. Capping the Ni film with Co is fou nd to show an unexpected behavior: the number of Ni layers, at which the re orientation occurs, is first increased until 2 ML of Co are added and then decreases rapidly with the addition of more Co layers. This feature is main ly attributed to changes in the band part of the anisotropy energy induced by the Ni/Co interface as seen in terms of layer-resolved contributions.