M. Gao et al., Characterization of heavily Cu-doped La2CuO4+delta by transmission electron microscopy and electron energy loss spectroscopy, PHYS REV B, 62(9), 2000, pp. 5413-5426
The techniques of transmission electron microscopy and electron energy loss
spectroscopy (EELS) have been used for characterizing heavily Cu-doped pol
ycrystalline La2CuO4.003 (LCO) samples. Semiquantitative and spatially reso
lved EELS analysis reveals that Cu may be doped into LCO lattice and that C
u doping introduces effectively holes into the sample. At room temperature,
the LCO grains were found to phase separate into hole-poor and hole-rich g
rains, and in hole-rich grains holes were found to have a strong tendency t
o concentrate and form one-dimensional static ordering with planar domain w
all promoted by high-energy electron beam. Two kinds of modulation vectors
have been found, they are 1/4b* +/- 1/3c* (with a wavelength similar to 18.
9 Angstrom) and 1/6a* +/- 1/3b* +/- 1/2c* (with a wavelength similar to 12.
7 Angstrom). At lower temperatures, sharper and higher-order superlattice r
eflections were observed, indicating an enhanced charge ordering, and super
lattice reflections originating from 1/4b* +/- 1/3c* were found to dominate
those originating from 1/6a* +/- 1/3b* +/- 1/2c* with a shorter modulation
period.