Analytical expressions have been derived for the exchange bias field, coerc
ivity, and effective anisotropy field in ferromagnetic/antiferromagnetic bi
layers in the framework of a model assuming the formation of a planar domai
n wall at the antiferromagnetic side of the interface with the reversal of
the ferromagnetic orientation. It is shown that then are five different set
s of analytical expressions for the hysteresis loop displacement and coerci
vity, which depend on the interfacial exchange coupling strength and ferrom
agnetic anisotropy, and only one expression for the effective anisotropy fi
eld. These expressions are compared with the previously reported theoretica
l results, and the validity of the latter is discussed. It is shown that in
the framework of the present model, the hysteresis loop, ac susceptibility
, and ferromagnetic resonance measurements of exchange anisotropy should gi
ve the same values for the exchange bias field. The difference between the
exchange bias field values, estimated experimentally by ac susceptibility a
nd through hysteresis loop measurements for Co/CoO bilayers, is explained a
s well.