The electrical transport properties of a bipolar InAs/GaSb system have been
studied in a magnetic field. The resistivity oscillates between insulating
and metallic behavior while the quantum Hall effect shows a digital charac
ter oscillating from 0 to 1 conductance quantum e(2)/h. The insulating beha
vior is attributed to the formation of a total energy gap in the system. A
novel looped edge state picture is proposed associated with the appearance
of a voltage between Hall probes which is symmetric on magnetic field rever
sal.