Excitonic effects in core-excitation spectra of semiconductors

Citation
R. Buczko et al., Excitonic effects in core-excitation spectra of semiconductors, PHYS REV L, 85(10), 2000, pp. 2168-2171
Citations number
31
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
10
Year of publication
2000
Pages
2168 - 2171
Database
ISI
SICI code
0031-9007(20000904)85:10<2168:EEICSO>2.0.ZU;2-5
Abstract
Core-electron excitation spectra are used widely for structural and chemica l analysis of materials, bur interpretation of the near-edge structure rema ins unsettled, especially for semiconductors. For the important Si L-2.3 ed ge, there are two mutually inconsistent interpretations, in terms of effect ive-mass excitons and in terms of Bloch conduction-hand final states. We re port ab initio calculations and show that neither interpretation is valid a nd that the near-edge structure is in fact dominated by short-range electro n-hole interactions even though the only bound excitons are effective-mass- like.