Kinetics of disilicide layer growth at the interface of tungsten with molten copper, silver, and tin saturated with silicon

Authors
Skorokhod, VV Titov, VP Churakov, MM
Citation
Vv. Skorokhod et al., Kinetics of disilicide layer growth at the interface of tungsten with molten copper, silver, and tin saturated with silicon, POWD MET ME, 38(11-12), 1999, pp. 608-609
Citations number
6
Categorie Soggetti
Metallurgy
Journal title
POWDER METALLURGY AND METAL CERAMICS
ISSN journal
10681302 → ACNP
Volume
38
Issue
11-12
Year of publication
1999
Pages
608 - 609
Database
ISI
SICI code
1068-1302(199911/12)38:11-12<608:KODLGA>2.0.ZU;2-7
Abstract
The kinetics of WSi2 layer growth at the interface of tungsten with molten metals saturated with silicon is studied. Research is performed at 1200 deg rees C using melts based on copper, silver, and tin. It was established tha t WSi2 layer growth in these melts obeys a "parabolic" rule but the corresp onding growth rate constants differ markedly, i.e., from 3.4 . 10(-11) m(2) /sec (melt based on copper) to 1.5 . 10(-13) m(2)/sec (melts based on silve r and tin). The reasons for this difference are discussed.