Oxygen-containing radiation defects in Si1-xGex

Authors
Pomozov, YV Sosnin, MG Khirunenko, LI Yashnik, VI Abrosimov, NV Schroder, W Hohne, M
Citation
Yv. Pomozov et al., Oxygen-containing radiation defects in Si1-xGex, SEMICONDUCT, 34(9), 2000, pp. 989-993
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
9
Year of publication
2000
Pages
989 - 993
Database
ISI
SICI code
1063-7826(2000)34:9<989:ORDIS>2.0.ZU;2-6
Abstract
The processes of formation and annealing of radiation defects in Si1-xGex s amples irradiated with 4-MeV electrons were studied. It is shown that, in t he range of Ge contents of 3.5-15 at.%, a reduction in the efficiency of fo rmation of oxygen-containing defects (VO and VO2) compared to that in silic on is observed. The existence of three types of VO centers, perturbed and u nperturbed by neighboring Ge atoms, is detected in Si1-xGex. (C) 2000 MAIK "Nauka/ Interperiodica".