Specific features of the behavior of oxygen in Sn-doped silicon

The influence of Sn on the absorption spectra of Si and the formation of lo w-temperature quenched-in donors (T = 450 degrees C) in Si was investigated . The effects of Ge and C were compared. It was found that Sn-doping of Si, similarly to Ge- and C-doping, leads to a decrease in the efficiency of th e formation of quenched-in donors. It was demonstrated that the inhibition effect of the formation of quenched-in donors depends on the elastic stress es induced by isovalent impurities in Si. The higher the deformational char ge of the impurity, the lower the concentration required for a comparable e ffect. (C) 2000 MAIK "Nauka/ Interperiodica".