Early stages of oxygen precipitation in silicon: The effect of hydrogen

Authors
Markevich, VP Murin, LI Lindstrom, JL Suezawa, M
Citation
Vp. Markevich et al., Early stages of oxygen precipitation in silicon: The effect of hydrogen, SEMICONDUCT, 34(9), 2000, pp. 998-1003
Citations number
49
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
9
Year of publication
2000
Pages
998 - 1003
Database
ISI
SICI code
1063-7826(2000)34:9<998:ESOOPI>2.0.ZU;2-0
Abstract
The formation of small oxygen clusters upon heat treatment at 280-375 degre es C was studied in crystalline silicon doped with hydrogen by high-tempera ture in-diffusion. The presence of hydrogen in concentrations of 10(15)-10( 16) cm(-3) significantly enhances (by up to a factor of 10(6) at T less tha n or equal to 300 degrees C) the oxygen diffusivity in Si crystals. Possibl e mechanisms of interaction between O and H impurity atoms and the origin o f hydrogen-enhanced oxygen diffusion in silicon are discussed. (C) 2000 MAI K "Nauka/Interperiodica".