The formation of small oxygen clusters upon heat treatment at 280-375 degre
es C was studied in crystalline silicon doped with hydrogen by high-tempera
ture in-diffusion. The presence of hydrogen in concentrations of 10(15)-10(
16) cm(-3) significantly enhances (by up to a factor of 10(6) at T less tha
n or equal to 300 degrees C) the oxygen diffusivity in Si crystals. Possibl
e mechanisms of interaction between O and H impurity atoms and the origin o
f hydrogen-enhanced oxygen diffusion in silicon are discussed. (C) 2000 MAI
K "Nauka/Interperiodica".