Radiation defects in n-4H-SiC irradiated with 8-MeV protons

Capacitance-related methods and electron spin resonance were used to study the deep-level centers formed in n-4H-SiC as a result of irradiation with 8 -MeV protons. For the samples, Schottky diodes and p-n structures formed on the layers either obtained by sublimational epitaxy or produced commercial ly by CREE Inc. (United States) were used. It was found that the type of ce nters introduced by irradiation is independent of the technology of the mat erial growth and the type of charged particles. On the basis of the results of annealing the defects and the data of electron spin resonance, the poss ible structure of the centers is suggested. (C) 2000 MAIK "Nauka/Interperio dica".