Citation
Ln. Vasil'Ev et al., Mechanism of high radiation stability of electrical parameters of SmS thinfilms, SEMICONDUCT, 34(9), 2000, pp. 1024-1026
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826
→ ACNP
Volume
34
Issue
9
Year of publication
2000
Pages
1024 - 1026
Database
ISI
SICI code
1063-7826(2000)34:9<1024:MOHRSO>2.0.ZU;2-5
Abstract
The influence of gamma-ray irradiation on the electrical properties of thin
polycrystalline films of samarium monosulfide with various crystal-lattice
parameters was studied. The stability of the resistivity of films under an
exposure dose in the range of D = 10(8)-10(9) R is explained on the basis
of the existence of a channel for the relaxation of radiation-induced excit
ations; this channel is related to the presence of different-valence samari
um ions (Sm2+ and Sm3+). (C) 2000 MAIK "Nauka/Interperiodica".