Optical bistability and instability in a semiconductor in the case where the relaxation time of free charge carriers and their equilibrium concentration are temperature-dependent

Authors
Bondarenko, OS Lysak, TM Trofimov, VA
Citation
Os. Bondarenko et al., Optical bistability and instability in a semiconductor in the case where the relaxation time of free charge carriers and their equilibrium concentration are temperature-dependent, SEMICONDUCT, 34(9), 2000, pp. 1031-1044
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
9
Year of publication
2000
Pages
1031 - 1044
Database
ISI
SICI code
1063-7826(2000)34:9<1031:OBAIIA>2.0.ZU;2-H
Abstract
The influence of temperature dependences of the relaxation time of free car riers and their equilibrium concentration on the feasibility of the bistabi lity and instability of steady states is considered. A model describing the process of interaction of optical radiation with a semiconductor was used in the consideration, with various assumptions concerning the conditions of this interaction made. (C) 2000 MAIK "Nauka/Interperiodica".