Generalized multilayer model for the quantitative analysis of the electromodulation components of the electroreflectance and photoreflectance spectraof semiconductors in the region of the E-0 fundamental transition

With the assumption of the Franz-Keldysh effect as the origination mechanis m of the interband electromodulation E-0 component, a generalized multilaye r model of this effect was proposed. This model includes such physical para meters as the strength of the surface electric field and its decay profile in the space charge region, energy broadening, and partial modulation of th e surface electric field. It was shown that the three regions can be define d in the simulated spectra, namely, the low-energy region, the region of ma in peak, and the high-energy region of the Franz-Keldysh oscillations. The effect of the model parameters on the line shape in these regions was studi ed. The ranges of the actual parameters were determined from the quantitati ve analysis of the experimental photoreflectance spectra of GaAs and InP su bstrates (n = 10(15) cm(-3)-10(18) cm(-3)). (C) 2000 MAIK "Nauka/Interperio dica".