Photovoltaic effect in a-Si : H/n-InSe heterostructures

Authors
Bekimbetov, RN Nikolaev, YA Rud', VY Rud', YV Terukov, EI
Citation
Rn. Bekimbetov et al., Photovoltaic effect in a-Si : H/n-InSe heterostructures, SEMICONDUCT, 34(9), 2000, pp. 1064-1067
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
9
Year of publication
2000
Pages
1064 - 1067
Database
ISI
SICI code
1063-7826(2000)34:9<1064:PEIA:H>2.0.ZU;2-9
Abstract
Heterostructures in an a-Si:H/InSe system were grown by the deposition of a -Si:H films onto the surface (001) of InSe single-crystal wafers and also b y deposition of pure indium films with their subsequent selenization, in wh ich case InSe films were synthesized at the a-Si:H surface. The photovoltai c effect was observed and studied for both types of heterostructures. It wa s concluded that the heterostructures obtained may be used as wide-band pho toconverters of radiation. (C) 2000 MAIK "Nauka/ Interperiodica".