Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters

The accumulation of electrons and holes in GaAs layers that contained As cl usters and were sandwiched between n- and p-type buffer GaAs layers was rev ealed by capacitance-voltage measurements. As a result of majority-carrier accumulation, expansive depletion regions are formed in the adjoining buffe r layers. Simulation of the capacitance-voltage characteristics, based on a numerical solution of the Poisson equation, shows that the accumulated cha rge density is similar to 1 x 10(12) cm(-2), which is comparable with the c oncentration of As nanoclusters determined by transmission electron microsc opy. (C) 2000 MAIK "Nauka/ Interperiodica".