Nanostructured a-Si : H films obtained by silane decomposition in a magnetron chamber

Authors
Golikova, OA Kazanin, MM Kuznetsov, AN Bogdanova, EV
Citation
Oa. Golikova et al., Nanostructured a-Si : H films obtained by silane decomposition in a magnetron chamber, SEMICONDUCT, 34(9), 2000, pp. 1085-1089
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
9
Year of publication
2000
Pages
1085 - 1089
Database
ISI
SICI code
1063-7826(2000)34:9<1085:NA:HFO>2.0.ZU;2-E
Abstract
Nanostructured a-Si:H films grown by the MASD method at various deposition temperatures (T-s = 300-390 degrees C) were studied. Among these films, tho se "on the verge of crystallinity" are of particular interest, because they tend to crystallize. In addition, although their electron-transport parame ters are slightly inferior to those of conventional device-grade a-Si:H, th ey are preferable because of the higher stability of their photoconductivit y under exposure to light. (C) 2000 MAIK "Nauka/Interperiodica".