Elemental composition and electrical properties of (a-C : H): Cu films prepared by magnetron sputtering

Citation
Tk. Zvonareva et al., Elemental composition and electrical properties of (a-C : H): Cu films prepared by magnetron sputtering, SEMICONDUCT, 34(9), 2000, pp. 1094-1099
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
9
Year of publication
2000
Pages
1094 - 1099
Database
ISI
SICI code
1063-7826(2000)34:9<1094:ECAEPO>2.0.ZU;2-3
Abstract
Amorphous hydrogenated carbon films with varied copper concentration were p repared by dc co-sputtering of graphite and copper targets in an argon-hydr ogen atmosphere. The relative atomic concentrations of carbon, copper, and oxygen were determined using proton Rutherford backscattering and the metho d of nuclear reactions. The dc conductivity of the films was studied in the in-plane and transverse geometries. The conductivity data are discussed in terms of the model of a medium in the form of a dielectric matrix containi ng two types of conducting inclusions in the form of graphite-like and copp er nanoclusters. (C) 2000 MAIK "Nauka/Interperiodica".