Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane

On the basis of the InAsSb/InAsSbP double heterostructure, lasers with a th ick active region (3 mu m) and a wide cavity (40 mu m) were fabricated that operated near 3.3 mu m and were intended for obtaining a low radiation div ergence in the p-n-junction plane. Laser emission spectra and radiation pat terns for different currents were studied. The current-induced shift of the laser emission line reaches 24 Angstrom. The half-width of the radiation p attern is 9 degrees in the p-n-junction plane and 63 degrees in the perpend icular plane. The experimental data on the radiation pattern are compared w ith the theoretical results expected in the case where two in-phase waves w ith the same amplitude are formed in a cavity. (C) 2000 MAIK "Nauka/Interpe riodica".