Optimization of passivation layers for corrosion protection of silicon-based microelectrode arrays

Citation
F. Fassbender et al., Optimization of passivation layers for corrosion protection of silicon-based microelectrode arrays, SENS ACTU-B, 68(1-3), 2000, pp. 128-133
Citations number
13
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
68
Issue
1-3
Year of publication
2000
Pages
128 - 133
Database
ISI
SICI code
0925-4005(20000825)68:1-3<128:OOPLFC>2.0.ZU;2-H
Abstract
The protectivity of passivation layers decides on the lifetime of silicon-b ased sensor chips in liquid and corrosive media. In this study the barrier effect of different organic (spin-coated) and inorganic (PECVD) thin films in brine was investigated using a microelectrode array as a microsensor mod el. The corrosion resistance of the microelectrode array was optimized by u sing buried conducting tracks and duplex (SiO2/Si3N4) or tripler (SiO2/Si3N 4/SiO2) layers instead of inorganic monolayers. The failure mechanisms were investigated with respect to physical and mechanical effects, and corrosiv e attack. (C) 2000 Elsevier Science S.A. AU rights reserved.