Depth profile analysis of CuInSe2 (CIS) thin films grown by the electrodeposition technique

Authors
Calixto, ME Sebastian, PJ
Citation
Me. Calixto et Pj. Sebastian, Depth profile analysis of CuInSe2 (CIS) thin films grown by the electrodeposition technique, SOL EN MAT, 63(4), 2000, pp. 335-345
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
63
Issue
4
Year of publication
2000
Pages
335 - 345
Database
ISI
SICI code
0927-0248(20000831)63:4<335:DPAOC(>2.0.ZU;2-#
Abstract
In this study, we report the results obtained from the auger electron spect roscopy (AES) depth profiling of CIS thin films grown by the electrodeposit ion technique. This result enables one to do a comparison between the bulk and superficial elemental compositions. The AES result is also compared wit h that obtained by the inductively coupled plasma (ICP) spectroscopy. These results support our proposition that the electrodeposited CIS film has a C u-rich bulk region and an In rich surface, which leads to the formation of an n-layer (CuIn2 Se-3.5) on the top of the p-type CIS (CuInSe2) phase (C) 2000 Elsevier Science B.V. All rights reserved.