Charge transport mechanism in a typical Au/CdTe Schottky diode

Authors
Mathew, X Enriquez, JP Sebastian, PJ Pattabi, M Sanchez-Juarez, A Campos, J McClure, JC Singh, VP
Citation
X. Mathew et al., Charge transport mechanism in a typical Au/CdTe Schottky diode, SOL EN MAT, 63(4), 2000, pp. 355-365
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
63
Issue
4
Year of publication
2000
Pages
355 - 365
Database
ISI
SICI code
0927-0248(20000831)63:4<355:CTMIAT>2.0.ZU;2-B
Abstract
The charge transport mechanism in a typical-Au/CdTe Schottky diode has been investigated. Evidence for different types of charge transport at differen t temperature regions has been observed. The dominant transport mechanism i n the 100-300K region is identified as the Poole-Frenkel type. The activati on energy of the trap level detected in the 100-300K temperature range show s a voltage dependence. The transport mechanism changes ata characteristic temperature of about 270 K. (C) 2000 Elsevier Science B.V. All rights reser ved.