Nitride semiconductors are of interest for blue light-emitting devices. Bec
ause of the large difference in vapor pressures between indium and nitrogen
, the growth of InGaN by atmospheric pressure metalorganic chemical vapor d
eposition (MOCVD) has been problematic. We used triethylgallium (TEGa), tri
methylindium (TMIn), and ammonia (NH3) as precursors of gallium, indium and
nitrogen, respectively, for the growth of InxGa1-xN (x = 0, 1, and 0.2) fi
lms on sapphire substrate by photo-assisted MOCVD. GaN and InGaN growth was
achieved at substrate temperatures of 650 degrees C and similar to 700 deg
rees C, respectively. The structure of the films was characterized by X-ray
diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). (
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