Growth of InGaN and GaN films by photoassisted metalorganic chemical vapordeposition

Nitride semiconductors are of interest for blue light-emitting devices. Bec ause of the large difference in vapor pressures between indium and nitrogen , the growth of InGaN by atmospheric pressure metalorganic chemical vapor d eposition (MOCVD) has been problematic. We used triethylgallium (TEGa), tri methylindium (TMIn), and ammonia (NH3) as precursors of gallium, indium and nitrogen, respectively, for the growth of InxGa1-xN (x = 0, 1, and 0.2) fi lms on sapphire substrate by photo-assisted MOCVD. GaN and InGaN growth was achieved at substrate temperatures of 650 degrees C and similar to 700 deg rees C, respectively. The structure of the films was characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). ( C) 2000 Elsevier Science B.V. All rights reserved.