Extended temperature range of absorptive optical bistability in semiconductors

Optical bistability based on the temperature dependence of the absorption c oefficient in a semiconductor is considered. It is theoretically demonstrat ed that the upper bound of the thermostat temperatures at which the bistabi lity is possible can be raised by a factor of three as against its conventi onal value reported in the literature. This can be achieved in the case of the Auger recombination of free electrons in semiconductors. (C) 2000 MAIK "Nauka/ Interperiodica".