Special features of the growth of hydrogenated amorphous silicon in PECVD reactors

Authors
Gorbachev, YE Zatevakhin, MA Krzhizhanovskaya, VV Shveigert, VA
Citation
Ye. Gorbachev et al., Special features of the growth of hydrogenated amorphous silicon in PECVD reactors, TECH PHYS, 45(8), 2000, pp. 1032-1041
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
45
Issue
8
Year of publication
2000
Pages
1032 - 1041
Database
ISI
SICI code
1063-7842(2000)45:8<1032:SFOTGO>2.0.ZU;2-X
Abstract
A model has been developed to calculate the growth parameters of silicon fi lms in diode- and triode-type PECVD reactors and to analyze the factors aff ecting the deposition of silicon-containing radicals. Mechanisms of the eff ect of diluting silane with molecular hydrogen on the film growth process h ave been explained. (C) 2000 MAIK "Nauka/ Interperiodica".