Electroluminescence of ion-implanted Si-SiO2 structures

Specific features of the electroluminescence of ion-implanted (Ar ion impla ntation in oxide layer bulk) and ion-synthesized (SIMOX technology) Si-SiO2 structures were studied. The electroluminescence from the electrolyte-insu lator-semiconductor system was registered in the 250-800 nm range at room t emperature. It has been found that implantation increases the concentration of centers already present in the oxide layer bulk and creates new lumines cent centers. The nature and the models of the centers are discussed. (C) 2 000 MAIK "Nauka/Interperiodica".