CuInSe2 thin films obtained by a novel electrodeposition and sputtering combined method

The combination of electrodeposited Cu-Se alloy and sputtered In precursors , followed by annealing in Se atmosphere, was found successful to obtain Cu InSe2, thin films with Cu/In composition ratios varying between 0.25 and 2. 75. Structural and morphological properties were observed to be dependent o n annealing temperature and Cu/In ratio. When Cu/In > 1, both a CuInSe2, cr ystallinity improvement and a smooth surface were achieved. Apart from the ternary CuInSe2, two different binaries were detected: Cu2Se crystallises a fter 400 degrees C annealing in samples with Cu/In > 1, and In2Se3 does aft er annealing at 500 degrees C for the distinct Cu/In ratios considered. (C) 2000 Elsevier Science Ltd. All rights reserved.