Monte Carlo simulation of electron transport in 6H-SiC

Temperature-and electric field-dependent electron transport in 6H-SiC has b een studied by single-particle Monte Car lo technique,and the Hall electron mobility in 6H-SiC has been measured over the temperature range 77K<T<700 K. The physical model used in the simulation is developed considering the m ain scattering mechanisms in details. The results show the excellent high-t emperature and high field properties as well as anisotropy of mobility. The ratio mu(parallel to c)/mu(perpendicular to c) in 6H-SiC is nearly 5,and t he saturation velocity upsilon(s) is 2x10(7) cm/s. The simulated results ar e in good agreement with measured data in a wide range of temperature and e lectric field.