TGS crystal growth polymorphism and surface diffusion growth mechanism

Citation
Dl. Sun et al., TGS crystal growth polymorphism and surface diffusion growth mechanism, ACT PHY C E, 49(9), 2000, pp. 1873-1877
Citations number
14
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
49
Issue
9
Year of publication
2000
Pages
1873 - 1877
Database
ISI
SICI code
1000-3290(200009)49:9<1873:TCGPAS>2.0.ZU;2-H
Abstract
Four faces of TGS crystal were chosen to study the growth kinetics. BCF spi ral growth mechanism for the surface diffusion model was analyzed using the kinetic data of the four faces. We found it is more important that the gro wth units enter the surface layer to grow after overcoming the dehydration activation energy, than the process of surface diffusion. Two simple crysta l forms of TGS spontaneous nucleation crystals were also observed.