The effect of XeCl (308 nm, 20 and 75 ns) excimer laser ablation of 30-40 n
m thick carbide layers (TiC, Cr3C2, B4C) deposited on 2000 nm polyimide in
the laser fluence range 10-1300 mJ cm(-2) has been investigated. The surfac
e modification in the ablated spot areas has been observed. At fluences of
100-250 mJ cm(-2), complete removal of the carbide layers was achieved with
out damage to the bottom polyimide layer. Ablation at fluences above 250 mJ
cm(-2) caused interface damage and a different polyimide behaviour under R
IE in oxygen, Copyright (C) 2000 John Wiley & Sons, Ltd.