Advances in situ ultra-high vacuum electron microscopy: Growth of SiGe on Si

In situ Ultra-High Vacuum (UHV) electron microscopy, including Transmission Electron Microscopy (TEM) at 300 keV electron energy and Low-Energy Electr on Microscopy (LEEM) at 0-30 eV electron energy, has advanced enormously ov er the last decade. Growth of thin films such as epitaxial Si1-xGex alloy t hin films on Si substrates has become routine, allowing high-resolution vid eo-rate studies of processes such as misfit dislocation injection and inter action, surface roughening and faceting, self-assembly of quantum dots, and shape transitions in such quantum dots. We review results obtained in the SiGe/Si system in the last five years. In addition we discuss new direction s in in situ electron microscopy as they apply to thin film formation in a range of materials and environments.