Perhydridosilicone films produced by IR laser-induced chemical vapour deposition from disiloxane

Solid perhydridosilicone films have been produced by transversely excited a tmospheric (TEA) and continuous-wave CO2 laser-induced gas-phase decomposit ions of H3SiOSiH3 controlled by elimination and polymerization of transient silanone H2Si=O and affording silane and hydrogen as side products. The de composition mechanism is supported by evidence of scavenged intermediates a nd minor volatile products. The films are characterized by FT infrared and x-ray photoelectron spectroscopy and by scanning electron microscopy and sh own to undergo facile oxidation of the topmost layers in air and chemical c hanges upon argon ion sputtering, Copyright (C) 2000 John Wiley & Sons, Ltd .