GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates

Red light-emitting diodes (LEDs) emitting at 670 nm and employing GaN0.011P 0.989 p-n homojunction grown on a (100) GaP substrate by gas-source molecul ar beam epitaxy with a rf plasma nitrogen source have been obtained. The in tegrated photoluminescence intensity of GaNP p-n homojunction LED is 5 time s stronger than that of Ga0.51In0.49P bulk layer, but the peak width is muc h broader. Compared to conventional high-brightness AlGaInP red LEDs, our L ED structure saves two process steps of etch removing of the GaAs absorbing substrate and wafer bonding to a GaP transparent substrate. (C) 2000 Ameri can Institute of Physics. [S0003-6951(00)01239-0].