Simple and high-yield method for synthesizing single-crystal GaN nanowires

A simple and high-yield method involving vapor-liquid-solid wire-like growt h mechanism was developed for the synthesis of GaN nanowires. In this proce ss, the mixture of Ga and SiO2 reacted with ammonia in the presence of the Fe2O3 catalyst supported by Al2O3. The x-ray powder diffraction measurement and transmission electron microscopy observations confirmed that the synth esized GaN nanowires are single-crystal hexagonal wurtzite structure with d iameters ranged from 10 to 50 nm and lengths up to several micrometers. Bas ed on the fact that a small Fe dominant particle attached to one end of som e nanowires, a growth model of the GaN nanowires was proposed. (C) 2000 Ame rican Institute of Physics. [S0003-6951(00)02639-5].