Athermal annealing of phosphorus-ion-implanted silicon

Authors
Grun, J Fischer, RP Peckerar, M Felix, CL Covington, BC DeSisto, WJ Donnelly, DW Ting, A Manka, CK
Citation
J. Grun et al., Athermal annealing of phosphorus-ion-implanted silicon, APPL PHYS L, 77(13), 2000, pp. 1997-1999
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
13
Year of publication
2000
Pages
1997 - 1999
Database
ISI
SICI code
0003-6951(20000925)77:13<1997:AAOPS>2.0.ZU;2-D
Abstract
A 1 cm(2) area in phosphorus-implanted silicon samples is annealed by irrad iation of a much smaller 0.002 cm(2) area with a single laser pulse. Resist ivity of the annealed region is uniform and similar to that measured after thermal annealing. Electrically activated donors did not diffuse into the s ample and only slightly towards the sample surface. The process is 100% rep roducible. We present evidence that the annealing is not caused by heat.