Diode-free magnetic random access memory using spin-dependent tunneling effect

Authors
Wang, FZ
Citation
Fz. Wang, Diode-free magnetic random access memory using spin-dependent tunneling effect, APPL PHYS L, 77(13), 2000, pp. 2036-2038
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
13
Year of publication
2000
Pages
2036 - 2038
Database
ISI
SICI code
0003-6951(20000925)77:13<2036:DMRAMU>2.0.ZU;2-S
Abstract
A diode-free magnetic random access memory comprises two sets of conductive lines, an array of magnetic tunnel junctions at each intersection, and a p eripheral circuitry. Such a simplified diode-free architecture described in this letter overcomes the diode-area constraint in the prior art and achie ves a significant breakthrough in storage density. (C) 2000 American Instit ute of Physics. [S0003- 6951(00)05039-7].