AlGaAs hot-electron optical modulator

We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, opera ting with red light, and is therefore fully compatible with silicon photode tectors. The operation principle is based on current-induced electron heati ng, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation w ith operating voltages < 1 V and switching times of units of picoseconds. ( C) 2000 American Institute of Physics. [S0003-6951(00)04239-X].