Resonant-cavity InGaN quantum-well blue light-emitting diodes

Authors
Song, YK Diagne, M Zhou, H Nurmikko, AV Schneider, RP Takeuchi, T
Citation
Yk. Song et al., Resonant-cavity InGaN quantum-well blue light-emitting diodes, APPL PHYS L, 77(12), 2000, pp. 1744-1746
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
12
Year of publication
2000
Pages
1744 - 1746
Database
ISI
SICI code
0003-6951(20000918)77:12<1744:RIQBLD>2.0.ZU;2-T
Abstract
We describe progress in blue resonant-cavity light-emitting diodes, based o n InGaN/GaN quantum-well heterostructures. We have fabricated vertical-micr ocavity devices in which either one or both mirrors forming the cavity are patterned, high-reflectivity dielectrics Bragg reflectors. The results sugg est that a blue vertical-cavity diode laser may be feasible by this approac h. (C) 2000 American Institute of Physics. [S0003-6951(00)00338-7].