Very thin insulating layer formed by low-energy Ar-beam bombardment in thesurface region of undoped hydrogenated amorphous silicon

A very thin insulating layer (VTIL) is formed by low-energy Ar-beam bombard ment in the surface region of undoped hydrogenated amorphous silicon (a-Si: H). Several experimental techniques have been utilized to determine the opt imal argon beam bombardment conditions to prepare electrically reliable VTI L and to investigate its physical properties (thickness, structure, nature, and density of defects). VTILs prepared under such conditions make the lea kage current of a-Si:H based semiconductor structures negligible and allow bias voltages of several volts (up to 5 V). (C) 2000 American Institute of Physics. [S0003-6951(00)01238-9].