Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition

We have fabricated light-emitting diodes on Si operating in the near-infrar ed. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafe r chemical vapor deposition reactor. The photoluminescence and the electrol uminescence of the islands are resonant in the spectral range around 1.4-1. 5 mu m wavelength. The electroluminescence is observed up to room temperatu re. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].