Amorphic diamond/silicon semiconductor heterojunctions exhibiting photoconductive characteristics

Amorphic diamond deposited from an intense laser plasma of C3+ and C4+ exhi bits semiconductor properties. Although this material has a measured electr ical breakdown strength of 3x10(9) V/m, it is shown to form a heterojunctio n with both p- and n-type Si. Regardless of the doping type and its concent ration in the Si, current is rectified in the same direction with the diamo nd layer acting as the cathode. A photoconductive effect is observed for th ese junction devices and current levels from the heterojunction vary with t he amount of reverse bias and the illumination. The spectral response is es timated to mostly lie in the range of 600-900 nm. (C) 2000 American Institu te of Physics. [S0003-6951(00)01738-1].