Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers

Authors
Senapati, B Samanta, SK Maikap, S Bera, LK Maiti, CK
Citation
B. Senapati et al., Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers, APPL PHYS L, 77(12), 2000, pp. 1840-1842
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
12
Year of publication
2000
Pages
1840 - 1842
Database
ISI
SICI code
0003-6951(20000918)77:12<1840:EONTOT>2.0.ZU;2-#
Abstract
Gate-quality ultrathin silicon dioxide films on strained-Si0.74Ge0.26 layer s have been deposited by microwave plasma-enhanced chemical vapor depositio n technique using tetraethylorthosilicate. Effect of nitric-oxide (NO)-plas ma treatment on the electrical properties of the deposited oxides have been studied using a metal-insulator-semiconductor structure. A significant imp rovement in the interface trap level density (D-it) and charge trapping beh avior under Fowler-Nordheim constant current stressing is observed for NO-p lasma treated deposited oxide films. (C) 2000 American Institute of Physics . [S0003-6951(00)01638-7].