Modeling of a GaN-based light-emitting diode for uniform current spreading

The characteristics of the GaN/InGaN multiquantum-well light-emitting diode (LED) have been examined from the view point of uniform current spreading. By means of simple modeling, it was found that the current density and the length of the lateral current path through the transparent layer represent dominant parameters in determining uniform current spreading. In this rega rd, we studied the effect of current density on the reliability characteris tics of the LED. We were able to significantly improve the electrical, opti cal, and reliability characteristics of the LED in terms of reducing the le ngth of the lateral current path through the transparent layer. (C) 2000 Am erican Institute of Physics. [S0003-6951(00)05238-4].