RESISTIVITY OF CU AND AG FILMS ON SI(100)2X1

Authors
LOPEZRIOS T GUILLET S LANCO P
Citation
T. Lopezrios et al., RESISTIVITY OF CU AND AG FILMS ON SI(100)2X1, Comptes rendus de l'Academie des sciences. Serie II. Mecanique, physique, chimie, astronomie, 319(6), 1994, pp. 639-643
Citations number
5
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Comptes rendus de l'Academie des sciences. Serie II. Mecanique, physique, chimie, astronomie → ACNP
ISSN journal
12518069
Volume
319
Issue
6
Year of publication
1994
Part
1
Pages
639 - 643
Database
ISI
SICI code
1251-8069(1994)319:6<639:ROCAAF>2.0.ZU;2-H
Abstract
The electrical resistivity between 4 and 300 K of Cu and Ag films (sev eral hundred angstroms thick) grown at room temperature on Si(100)2 x 1 surfaces is discussed. The resistivity of these samples has an abnor mal temperature dependence due to an unexpected contribution of the Si substrate.