Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition

The bulk-quantity synthesis of single-crystal GaN nanowires has been achiev ed through a simple method of hot filament chemical vapor deposition withou t using a nanometer-sized catalyst. The microstructures and optical propert ies of GaN nanowires have been studied by electron microscopy and photolumi nescence (PL) measurements at room temperature. The GaN nanowires had diame ters of 5-12 nm and lengths of a few micrometers, and were highly pure. The y possessed a hexagonal wurtzite structure and had a growth direction perpe ndicular to the {<1(1)over bar 01>} plane. The PL spectra showed a broad em ission peak centered at 420 nm. (C) 2000 Published by Elsevier Science B.V.