Electronic structure of cluster-assembled Al12C (Si) solid

Authors
Quan, HJ Gong, XG
Citation
Hj. Quan et Xg. Gong, Electronic structure of cluster-assembled Al12C (Si) solid, CHIN PHYS, 9(9), 2000, pp. 656-660
Citations number
18
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS
ISSN journal
10091963 → ACNP
Volume
9
Issue
9
Year of publication
2000
Pages
656 - 660
Database
ISI
SICI code
1009-1963(200009)9:9<656:ESOCA(>2.0.ZU;2-9
Abstract
The electronic structures of the cluster-assembled solid Al12C (Si) are stu died by the ab initio method. We find that Al12C (Si) can solidify into a v an der Waals solid. The electronic band structures show very weak dispersio n. The main features in the electronic structure of cluster are retained in the solid, and an energy gap up to about 1.5 eV is observed for Al12C and Al12Si solids.